It has been announced today that Samsung Electronics has successfully developed its first 16Gb DDR5 DRAM using a 12nm process technology, and it has completed product evaluations with AMD to ensure compatibility with AMD CPUs.
In order to achieve this breakthrough, Samsung said that a new high-k material was used to increase cells’ capacitance, as well as a new patented design technique to improve key circuit characteristics.
With the addition of advanced multi-layer extreme ultraviolet (EUV) lithography technology, Samsung data indicates that the new DRAM has the highest Die density (Die density), which can increase wafer productivity by 20% by combining it with Samsung’s advanced multi-layer EUV lithography technology. Its 12nm-class DRAM is based on the latest DDR5 standard, which will enable Samsung’s 12nm-class DRAM to reach speeds of up to 7.2 gigabits per second (Gbps).
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In terms of energy efficiency, the power consumption of 12nm-class DRAM has been reduced by some 23% in comparison with the previous generation of Samsung DRAM products.
