It has been announced today that Samsung Electronics has successfully developed its first 16Gb DDR5 DRAM using a 12nm process technology, and it has completed product evaluations with AMD to ensure compatibility with AMD CPUs.
In order to achieve this breakthrough, Samsung said that a new high-k material was used to increase cells’ capacitance, as well as a new patented design technique to improve key circuit characteristics.
With the addition of advanced multi-layer extreme ultraviolet (EUV) lithography technology, Samsung data indicates that the new DRAM has the highest Die density (Die density), which can increase wafer productivity by 20% by combining it with Samsung’s advanced multi-layer EUV lithography technology. Its 12nm-class DRAM is based on the latest DDR5 standard, which will enable Samsung’s 12nm-class DRAM to reach speeds of up to 7.2 gigabits per second (Gbps).
In terms of energy efficiency, the power consumption of 12nm-class DRAM has been reduced by some 23% in comparison with the previous generation of Samsung DRAM products.
With the introduction of this new DRAM product in 2023, Samsung plans to expand the range of markets for this DRAM product based on advanced 12nm-class process technology to a wider market segment as soon as possible.